Quick Detail:
4-megabit 2.5-volt or 2.7-volt DataFlash
Description:
The AT45DB041B is an SPI compatible serial interface Flash memory
ideally suited for a wide variety of digital voice-, image-,
program code- and data-storage applications. Its 4,325,376 bits of
memory are organized as 2048 pages of 264 bytes each. In addition
to the main memory, the AT45DB041B also contains two SRAM data
buffers of 264 bytes each.
The buffers allow receiving of data while a page in the main memory
is being reprogrammed, as well as reading or writing a continuous
data stream. EEPROM emulation (bit or byte alterability) is easily
handled with a self-contained three step Read-ModifyWrite
operation. Unlike conventional Flash memories that are accessed
randomly with multiple address lines and a parallel interface, the
DataFlash uses a SPI serial interface to sequentially access its
data. DataFlash supports SPI mode 0 and mode 3. The simple serial
interface facilitates hardware layout, increases system
reliability, minimizes switching noise, and reduces package size
and active pin count. The device is optimized for use in many
commercial and industrial applications where high density, low pin
count, low voltage, and low power are essential. The device
operates at clock frequencies up to 20 MHz with a typical active
read current consumption of 4 mA.
To allow for simple in-system reprogrammability, the AT45DB041B
does not require high input voltages for programming. The device
operates from a single power supply, 2.5V to 3.6V or 2.7V to 3.6V,
for both the program and read operations. The AT45DB041B is enabled
through the chip select pin (CS) and accessed via a threewire
interface consisting of the Serial Input (SI), Serial Output (SO),
and the Serial
Clock (SCK). All programming cycles are self-timed, and no separate
erase cycle is required before programming.
Applications:
• Single 2.5V - 3.6V or 2.7V - 3.6V Supply
• Serial Peripheral Interface (SPI) Compatible
• 20 MHz Max Clock Frequency
• Page Program Operation
– Single Cycle Reprogram (Erase and Program)
– 2048 Pages (264 Bytes/Page) Main Memory
• Supports Page and Block Erase Operations
• Two 264-byte SRAM Data Buffers – Allows Receiving of Data while
Reprogramming the Flash Memory Array
• Continuous Read Capability through Entire Array
– Ideal for Code Shadowing Applications
• Low Power Dissipation
– 4 mA Active Read Current Typical
– 2 µA CMOS Standby Current Typical
• Hardware Data Protection Feature
• 5.0V-tolerant Inputs: SI, SCK, CS, RESET, and WP Pins
• Commercial and Industrial Temperature Ranges
• Green (Pb/Halide-free/RoHS Compliant) Package Options
Specifications:
Datasheets | AT45DB041B |
Product Photos | 28-TSOP |
Standard Package | 234 |
Category | Integrated Circuits (ICs) |
Family | Memory |
Series | - |
Packaging | Tray |
Format - Memory | FLASH |
Memory Type | DataFLASH |
Memory Size | 4M (2048 pages x 264 bytes) |
Speed | 20MHz |
Interface | SPI Serial |
Voltage - Supply | 2.7 V ~ 3.6 V |
Operating Temperature | -40°C ~ 85°C |
Package / Case | 28-TSSOP (0.465", 11.80mm Width) |
Supplier Device Package | 28-TSOP |
Competitive Advantage:
Warranty :180 days !
Free shipping: Order over $1000 win a free shipment fee
(goods weight below 3Kg) ,during 20130901-20130930 .
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