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IGBT Power Module MGF0906B - TOSHIBA - < High-power GaAs FET (small signal gain

IGBT Power Module MGF0906B - TOSHIBA - < High-power GaAs FET (small signal gain

IGBT Power Module MGF0906B - TOSHIBA - < High-power GaAs FET (small signal gain

Quick Detail: < High-power GaAs FET (small signal gain stage)> Description: The MGF0906B, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. Applications:  Class A ...

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analog integrated circuit

      

integrated circuit chips

      
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